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| JMnic Product Specification Silicon PNP Power Transistors DESCRIPTION With TO-220Fa package Complement to type 2SD1271 Low saturation voltage Good linearity of hFE High current APPLICATIONS For power switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base 2SB946 Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak TC=25ae PC Collector power dissipation Ta=25ae Tj Tstg Junction temperature Storage temperature 2 150 -55~150 ae ae Open emitter Open base Open collector CONDITIONS VALUE -130 -80 -7 -7 -15 40 W V A A UNIT V JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-10mA , IB=0 IC=-5A; IB=-0.25A IC=-5A; IB=-0.25A VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-0.1A ; VCE=-2V IC=-3A ; VCE=-2V IC=-0.5A ; VCE=-10V 45 60 30 MIN -80 2SB946 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V -0.5 -1.5 -10 -50 |I |I V V A A 260 MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=-3A ;IB1=-0.3A IB2=0.3A 0.5 1.5 0.1 |I |I |I s s s hFE-2 Classifications R 60-120 Q 90-180 P 130-260 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB946 Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) 3 JMnic Product Specification Silicon PNP Power Transistors 2SB946 4 |
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